GaN Module Anti Drone Module Jammer Interceptor Blocking Antidrone Jamming Module

Product Details
Customization: Available
Usage: Drone
Type: Wireless
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  • GaN Module Anti Drone Module Jammer Interceptor Blocking Antidrone Jamming Module
  • GaN Module Anti Drone Module Jammer Interceptor Blocking Antidrone Jamming Module
  • GaN Module Anti Drone Module Jammer Interceptor Blocking Antidrone Jamming Module
  • GaN Module Anti Drone Module Jammer Interceptor Blocking Antidrone Jamming Module
  • GaN Module Anti Drone Module Jammer Interceptor Blocking Antidrone Jamming Module
  • GaN Module Anti Drone Module Jammer Interceptor Blocking Antidrone Jamming Module
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Basic Info.

Support Network
100-6GHz
Information content
Drone Signal
Condition
New
Working Frequency
100-6GHz
Output Power
50-100watts
Transport Package
Box
Specification
13*5*2cm
Trademark
LY
Origin
China
Production Capacity
50000PCS/Year

Product Description

50W or 100W  GaN Shield Power Drone Signal Jammer Module with Circulator

The 100W 50W GaN Shield Power Drone Signal Jammer Module with Circulator is a high-performance solution tailored for secure environments requiring advanced drone signal interference. Designed with state-of-the-art Gallium Nitride (GaN) technology, this module offers superior efficiency, power, and reliability, ensuring seamless operation in critical applications.

Operating within a frequency range of 1--MHz to 6000MHz, this jammer module delivers a robust output power of 50W, making it ideal for neutralizing unauthorized drone signals and ensuring protection over wide areas. The integrated circulator enhances system durability by safeguarding against potential signal reflections, ensuring stable and consistent performance even in demanding conditions.

Our GaN (Gallium Nitride) chip offers several key advantages over traditional LDMOS (Lateral Diffused Metal-Oxide-Semiconductor) technology, making it a superior choice for high-performance applications.

  1. High Work Efficiency: GaN chips deliver significantly higher work efficiency than LDMOS, thanks to their superior power density and reduced conduction losses. This results in better energy conversion, optimized performance, and lower operational costs, making it an ideal solution for demanding applications.

  2. Enhanced Heat Dissipation with Ceramic Tube Shell: The GaN chip features a ceramic tube shell that improves heat dissipation, allowing for better thermal management. This advanced design ensures that the chip remains cool even under high-power conditions, which enhances stability and extends the lifespan of the device.

  3. Robust Protection Against Open-Circuit States: Unlike LDMOS chips, which can easily be damaged by open-circuit conditions, our GaN chip is designed to withstand such situations without failure. It will not burn out when in an open-circuit state, providing added reliability and reducing the risk of costly repairs or replacements.
     

    ABOUT POWER:

    10W   GAN; 20W   GAN;  30W   GAN; 40W   GAN; 50W   GAN;  60W   GAN 100W 

    Frequency Range
    125-215/220-350/300-410/350-470//470-600//410-500//500-600//600-730//700-850//730-910//850-950//910-1100//1100-1300//1200-1400//1400-1600//1300-1500//1500-1700//1650-1800//2000-2200//2200-2400//2350-2550//2400-2600//2600-2800//3300-3500//5150-5350//5725-5860//5700-5900//5800-6000//6000-6250

     

    Number

    Items

    Specifications

    1

    Frequency Range

    100-6000MHz ( Frequency Cutomized )

    2

    Operating Voltage

    28V

    3

    Flatness

    ±0.5dB

    4

    Output Power

    47dBm

    5

    Current

    4.30A @28V, 47dBm

    6

    Efficiency

    45%@47dBm

    7

    LED State

    Red

    8

    Operating Temperature

    -30ºC~85ºC

    9

    Storage Temperature

    -40ºC~150ºC

    10

    Operating Humidity

    <95%RH

    11

    RF PORT

    Output: SMA-F

    12

    Power Socket

    15cm red/black wire

    13

    Shell Material

    Aluminum

    14

    Shell Size

    131*53*17mm

    15

    Net Weight

    0.25Kg

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